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1.西安交通大学电工材料电气绝缘全国重点实验室,西安 710049
2.重庆泰山电缆有限公司,重庆 401120
白健(1997—),男,硕士,从事高压交直流电缆绝缘关键技术方面研究(E-mail:2427279840@qq.com)。
张亚(1988—),男,本科,工程师,从事高压电缆设计及制造研究(E-mail:454401339@qq.com)。
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白健, 张亚, 詹陶, 等. 脱气时间对电缆绝缘中交联副产物含量和直流特性的影响[J/OL]. 高压电器, 2025,1-11.
BAI Jian, ZHANG Ya, ZHAN Tao, et al. Effect of Degassing Time on Byproducts Content and DC Characteristics of Cable Insulation[J/OL]. High voltage apparatus, 2025, 1-11.
直流电缆的交联过程会在绝缘中产生大量副产物,影响电缆的电气性能。通常采用脱气工艺脱去电缆绝缘中的交联副产物,但随着直流电缆电压等级的升高,绝缘厚度进一步增加,脱除副产物变的越来越困难。文中以不同脱气时间的500 kV高压直流XLPE电缆绝缘切片试样为研究对象,确定了交联副产物相对含量的半定量分析方法,研究了脱气过程电缆绝缘中交联副产物含量的变化和副产物对XLPE电缆绝缘直流性能的影响。结果表明,脱气可以减少电缆绝缘中的副产物,但无法将副产物完全脱除。并且在整个脱气过程中,中绝缘处副产物含量最多,内绝缘和外绝缘处副产物含量最少。脱气75天后,电缆绝缘电导率随副产物含量的降低呈指数形式从10
-13
S/m减少至10
-15
S/m,电缆绝缘的直流击穿场强随副产物含量的变化不明显,平均电荷密度和最大场强畸变率分别由最大值8.3 C·m
-3
、113%线性减少至6.4 C·m
-3
、55%,同时陷阱密度从367 pC减少至102 pC,陷阱深度从0.45 eV减少至0.04 eV。
The crosslinking process of DC cable will produce a lot of byproducts in the insulation
which will affect the electrical performance of the cable. The crosslinking byproducts are usually removed by degassing process
but with the increase of voltage level of DC cable and the further increase of insulation thickness
it becomes more and more difficult to remove byproducts. In this paper
500 kV HVDC XLPE cabl
e insulation slices are selected as research samples
and a semi-quantitative analysis method for the relative content of crosslinking byproducts was established. The change of crosslinking byproducts content in cable insulation during degassing and the effect on the DC feature of insulation were studied. The results show that degassing can reduce the by-products in cable insulation
but can not completely remove the byproducts. In the whole degassing process
the content of byproducts in the middle insulation is the highest
and the content of by-products in the inner insulation and the outer insulation is the least. After 75 days of degassing
the DC conductivity of insulation decreases exponentially from 10
-13
S/m to 10
-15
S/m with the decrease of byproducts content. DC breakdown field strength does not change significantly with the content of byproducts. The average charge density and maximum field strength distortion respectively decreased linearly from 8.3 C·m
-3
and 113% to 6.4 C·m
-3
and 55%. Meanwhile
the trap density decreased from 367 pC to 102 pC
and the trap depth decreased from 0.45 eV to 0.04 eV.
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