LIU Wei-dong1, DONG Qin1, SUN Hui-gang2. Enhancing Skin Effect for Suppression of Fast Transient Overvoltage[J]. High voltageapparatus, 2009, 45(6): 12-14+19.
LIU Wei-dong1, DONG Qin1, SUN Hui-gang2. Enhancing Skin Effect for Suppression of Fast Transient Overvoltage[J]. High voltageapparatus, 2009, 45(6): 12-14+19.DOI:
GIS disconnecting bus results in very fast transient overvoltage(VFTO)
and vacuum switch switching inductive load produces multiple restriking overvoltage.These fast transient overvoltages can make uneven distribution in the insulation of electric equipments
and make them overstressed.In this paper
an enhanced skin effect method is proposed to suppress the fast transient overvoltage.A coaxial structure
taking a conductor as the core
high frequency magnetic rings as inner layer
and a resistant tube as outer layer
is adopted to generate the enhanced skin effect.In this coaxial structure
the normal power frequency current takes a way through the central conductor
and the high frequency fast transient overvoltage is forced to the outer resistant layer due to the enhanced skin effect and is damped there.Significant suppression effect of the fast transient overvoltage is achieved in simulation tests.