Stress in the Enclosure of 126kV GIS Bus-bar[J]. High voltageapparatus, 1991, (1): 7-10.DOI:
126kV的GIS母线筒外壳应力分析
摘要
本文针对西开厂和三菱两种母线筒的设计方案
采用应力集中理论和有限元理论分别对简壁开口处应力较为集中的部分进行了分析计算
两者所得结果基本吻合
为该部件的设计提供了可靠的理论根据。
Abstract
Using the Stress-Concentration Theory and the Finite-Element Theory
some analysis and calculation were made on the stress concentracted sections of GIS hole enclosure (hole making place) for two design schemes.And the results show mainly unisonous.