JIANG Yuhang, LIU Siyi, FU Zhengcai, et al. Electrical Field Simulation and Analysis of 1200 kV High-voltage Controllable Ignition Device[J]. High voltageapparatus, 2021, 57(2): 48-55+62.
JIANG Yuhang, LIU Siyi, FU Zhengcai, et al. Electrical Field Simulation and Analysis of 1200 kV High-voltage Controllable Ignition Device[J]. High voltageapparatus, 2021, 57(2): 48-55+62. DOI: 10.13296/j.1001-1609.hva.2021.02.008.
To meet the requirements of large capacity synthesis test for EHV switching equipment
it is necessary todevelop a 1 200 k V high-voltage controllable ignition device. The manufacturing difficulty
production period andcost will be greatly reduced if the ignition device adopts the three-ball and double-gap structure. In order to verify thefeasibility of the structure
the electrical field distribution in the device is simulated and analyzed. Simulation resultsshow that the three-ball and double-gap structure is beneficial to more uniform distribution of the electrical field. Inthe rated working condition
the maximum electrical field strength in the gaps is 1.747 k V/mm when the ball diameteris 1 500 mm and the gap distance is 500 mm
which meets the insulation requirement
and the safety factor is higherthan 1.5. In addition
the influence of gap distance on the electrical field distribution is reflected in the variation of dis-tributed capacitance
and the gap distance on high voltage side plays a more significant role in the potential distribution.