温度因素对盆式绝缘子缺陷电场分布影响的仿真研究

顾媛丽; 康朝阳; 王绪亮; 韩克俊; 刘洪顺; 李清泉

doi:10.13296/j.1001-1609.hva.2026.06.019

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温度因素对盆式绝缘子缺陷电场分布影响的仿真研究

研究与分析 | 更新时间：2026-06-10

- 温度因素对盆式绝缘子缺陷电场分布影响的仿真研究
- Simulation Study on the Influence of Temperature Factors on the Electric Field Distribution of Defects in Insulating Spacers
- 高压电器 2026年62卷第6期页码：155-162
- 作者机构：
  
  山东大学特高压输变电技术与装备山东省重点实验室，济南 250061
  山东电工电气集团有限公司，济南 250101
- 作者简介：
  
  顾媛丽（1998—），女，硕士研究生，主要研究方向为GIS绝缘缺陷特性研究（E-mail：903364597@qq.com）。
  李清泉（1969—），男，教授，博导，主要研究方向为高压设备复合绝缘的放电特性、绝缘的劣化机理、绝缘状态评估、人工智能在电力设备中的应用（通信作者）（E-mail：lqq@sdu.edu.cn）。
- 基金信息：
  
  山东省重点研发计划（重大科技创新项目）;Shandong Province Key R&D Program (Major Science and Technology Innovation Project)(2021CXGC010211)
- DOI：10.13296/j.1001-1609.hva.2026.06.019
  中图分类号：
- 收稿：2025-11-18，
  
  修回：2026-02-11，
  
  纸质出版：2026-06-16
- 稿件说明：
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顾媛丽, 康朝阳, 王绪亮, 等. 温度因素对盆式绝缘子缺陷电场分布影响的仿真研究[J]. 高压电器, 2026,62(6):155-162.

GU Yuanli, KANG Zhaoyang, WANG Xuliang, et al. Simulation Study on the Influence of Temperature Factors on the Electric Field Distribution of Defects in Insulating Spacers[J]. High Voltage Apparatus, 2026, 62(6): 155-162.
顾媛丽, 康朝阳, 王绪亮, 等. 温度因素对盆式绝缘子缺陷电场分布影响的仿真研究[J]. 高压电器, 2026,62(6):155-162. DOI： 10.13296/j.1001-1609.hva.2026.06.019.

GU Yuanli, KANG Zhaoyang, WANG Xuliang, et al. Simulation Study on the Influence of Temperature Factors on the Electric Field Distribution of Defects in Insulating Spacers[J]. High Voltage Apparatus, 2026, 62(6): 155-162. DOI： 10.13296/j.1001-1609.hva.2026.06.019.

摘要

温度是影响气体绝缘金属封闭组合电器（GIS）中典型绝缘缺陷形成与发展的重要因素之一。为探究温度因素对盆式绝缘子缺陷电场分布的影响，文中利用有限元软件建立了252 kV GIS电—热—流多物理场耦合模型，得到了不同导体温度下、处于不同位置的气泡、裂纹及悬浮金属微粒缺陷下绝缘子表面的电场分布，并通过表面电荷分布与计算气体临界击穿场强进一步分析电场变化规律。结果表明：导体温度升高，3种缺陷下的绝缘子表面最大场强都随之增大，裂纹缺陷下增幅最大，悬浮金属微粒下最小。温度变化对电场的影响与绝缘缺陷类型、位置有关。导体温度越高，悬浮金属微粒周围与位于低压侧的气泡、裂纹处的绝缘子表面电场强度逐渐增大，而高压侧的气泡及裂纹处的绝缘子表面电场强度逐渐减小。位于低压侧的绝缘缺陷电荷密度随温度变化更加明显，电场畸变幅值改变也更大。研究结果有助于进一步认识温度变化对气泡、裂纹、悬浮金属微粒缺陷下盆式绝缘子表面电场分布的影响规律，对绝缘子设计改进也有一定的参考价值。

Abstract

Temperature is one of the important factors affecting the formation and development of typical insulation defects in gas insulated switchgear (GIS) . For exploring the influence of temperature factors on the electric field distribution of defects on the insulating spacers

a 252 kV GIS electric-thermal-fluid multi-physical field coupling model is set up in this paper by using finite element software

and the electric field distributions on the spacer surface are obtained for different conductor temperatures

bubbles

cracks

and suspended metal particle defects in different locations

and the variation of electric field is analyzed further by the space surface charge distribution and calculation of critical breakdown field strength of gas. The results show that with the increase of conductor temperature the maximum field strength on the spacer surface increases accordingly under all three defects

with maximum increase under crack defect and minimum increase under suspended metal particles. The effect of temperature change on the electric field is related to the type and location of the insulation defects. The higher the temperature of the conductor

the electric field strength of the spacer surface around the suspended metal particles and the bubbles as well as cracks on the low-voltage side gradually increases

while the electric field strength of the spacer surface at the bubbles and cracks on the high-voltage side gradually decreases. The charge density of insulation defects on the low voltage side varies more significantly with temperature variation

and the electric field distortion ampli tude changes more significantly. The study results can be not onlyuseful for further understanding the effect of temperature variation on the electrical field distribution on the surface of insualtign spacer under bubbles

cracks and suspended metal particles defects

but also have some reference value for design improvement of the insulating spacer.

关键词

Keywords

references

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