Under the background of ‘dual Carbon’

the digital transformation of the new power system places higher demands on power sensor technology. In view of weak temperature stability of optical electric field sensor

a chip type optical silicon based electric field sensor based on electro-optical polymer film is proposed in this paper. Firstly

the principle of electro-optical effect

the second-order nonlinear optical effect of electro-optical polymer and the electro-optical energy coupling method are introduced; Then

the processing flow of the sensor is designed and the preparation is finished and

at the same time

the electro-optical polymer is successfully coated on the sensitive chip; Finally

the linearity

AC response and temperature characteristic of the sensor are carried out by setting up the experimental test platform. The experimental results show that the prepared optical electric field sensor has good linearity and high sensitivity up to 0.945 mV·(kV·m

-1

)

-1

under the power frequency electric field

and both output amplitude and phase of the sensor are stable in the temperature range of 0-75 ℃

with the maximum fluctuation of the amplitude ratio of 0.481 dB and the maximum phase difference of 3.82°. The structure of the sensor proposed in this paper practically and feasibly improves the temperature characteristics of the silicon-based integrated optical electric field sensor

and provides a reference for the use of silicon-based integrated optical ele

ctric field sensors in power systems.