Degradation and Failure Mechanism Analysis of High Voltage Thyristor Characteristic Paramters Under Steady Temperature Accelerated Stress

ZHU Yingfeng; WANG Andong; LYU Xuebin; CHEN Fei; LI Chenhao; DING Junqi; CAO Zhiwei; LI Ming

doi:10.13296/j.1001-1609.hva.2026.02.024

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Degradation and Failure Mechanism Analysis of High Voltage Thyristor Characteristic Paramters Under Steady Temperature Accelerated Stress

Research & Analysis | 更新时间：2026-03-16

- Degradation and Failure Mechanism Analysis of High Voltage Thyristor Characteristic Paramters Under Steady Temperature Accelerated Stress
- High Voltage Apparatus Vol. 62, Issue 2, Pages: 194-206(2026)
- 作者机构：
  
  国网山东省电力公司电力科学研究院，济南 250003
  山东省智能电网技术创新中心，济南 250003
  国网山东省电力公司，济南 250001
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2026.02.024
  CLC：
- Received：08 July 2025，
  
  Revised：2025-10-30，
  
  Published：16 February 2026
- 稿件说明：
移动端阅览
ZHU Yingfeng, WANG Andong, LYU Xuebin, et al. Degradation and Failure Mechanism Analysis of High Voltage Thyristor Characteristic Paramters Under Steady Temperature Accelerated Stress[J]. High Voltage Apparatus, 2026, 62(2): 194-206.
DOI：

ZHU Yingfeng, WANG Andong, LYU Xuebin, et al. Degradation and Failure Mechanism Analysis of High Voltage Thyristor Characteristic Paramters Under Steady Temperature Accelerated Stress[J]. High Voltage Apparatus, 2026, 62(2): 194-206. DOI： 10.13296/j.1001-1609.hva.2026.02.024.

摘要

晶闸管是换流阀的核心元件，近年来因晶闸管老化导致的设备安全事故逐年上升，晶闸管的安全运行关系着换流阀乃至整个直流输电系统的安全运行。为研究高压晶闸管在稳态温度应力下的退化特性，文中首先设计了温度加速应力退化实验方案，基于该平台分别在结温为T

stg

和1.1T

stg

条件下开展了1000h的稳态温度加速应力退化实验，并以100 h为时间间隔周期测量了晶闸管试品的各项器件特征参数。特征参数测试数据表明：温度应力使得晶闸管的反向恢复电荷和触发电流发生不同程度的降低，通态电压有所增大，而漏电流的变化是较为突发性的，没有明显的先兆。通过对失效器件特性分析，获得温度应力下晶闸管的主要失效模式为耐压降低，并发现芯片存在表面铝膜的迁移现象。

Abstract

Thyristor is the core component of converter valve. In recent years

the safety accidents of the equipment due to the aging of thyristor are increasing year by year. The safe operation of

thyristor is related to the safe operation of converter valve and even the whole DC power transmission system. For studying the degradation characteristics of high voltage thyristors under steady-state temperature stress

a temperature accelerated stress degradation experiment scheme is designed firstly

the temperature accelerated stress degradation experiments for 1000 h at temperature of T

stg

and 1.1T

stg

are performed respectively on the basis of the platform

with a parameter measurement cycle of 100 h. The test data of characteristic parameters show that the temperature stress reduces the reverse recovery charge and trigger current of the thyristor to varying degrees

and the on-state voltage increases

while the leakage current changes suddenly without obvious forewarning. By analyzing the characteristics of aging elements

the main failure mode of the thyristor under temperature stress is reduction of withstanding voltage

and the migration of aluminum film on the surface of the chip are found.

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Keywords

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