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Research Progress on Formation Mechanisms of Latent Defects and Non-destructive Testing Techniques for GIS/GIL Insulators
High-voltage Switchgear and GIS/GIL Technology | 更新时间:2026-09-10
    • Research Progress on Formation Mechanisms of Latent Defects and Non-destructive Testing Techniques for GIS/GIL Insulators

    • High Voltage Apparatus   Vol. 62, Issue 9, Pages: 1-14,32(2026)
    • DOI:10.13296/j.1001-1609.hva.2026.09.001    

      CLC:
    • Received:12 April 2026

      Revised:2026-05-21

      Published:16 September 2026

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  • HE Chun, HE Jin, ZHAO Siyuan, et al. Research Progress on Formation Mechanisms of Latent Defects and Non-destructive Testing Techniques for GIS/GIL Insulators[J]. High Voltage Apparatus, 2026, 62(9): 1-14,32. DOI: 10.13296/j.1001-1609.hva.2026.09.001.

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