Analysis of Voltage Distribution Along Series Silicon Stacks and Voltage Sharing by Unequal Parameter Method

ZHANG Lei; FU Zheng-cai; SUN Wei; HE Lin; CHEN Jian

您当前的位置：

首页 >

文章列表页 >

Analysis of Voltage Distribution Along Series Silicon Stacks and Voltage Sharing by Unequal Parameter Method

更新时间：2025-04-26

- Analysis of Voltage Distribution Along Series Silicon Stacks and Voltage Sharing by Unequal Parameter Method
- High VoltageApparatus Vol. 45, Issue 6, Pages: 24-27(2009)
- 作者机构：
  
  上海交通大学电气工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM832
- Published：2009
- 稿件说明：
移动端阅览
[1]张磊,傅正财,孙伟,贺林,陈坚.长串高压硅堆的电压分布与不等值均压分析[J].高压电器,2009,45(06):24-27.

ZHANG Lei, FU Zheng-cai, SUN Wei, et al. Analysis of Voltage Distribution Along Series Silicon Stacks and Voltage Sharing by Unequal Parameter Method[J]. High voltageapparatus, 2009, 45(6): 24-27.
[1]张磊,傅正财,孙伟,贺林,陈坚.长串高压硅堆的电压分布与不等值均压分析[J].高压电器,2009,45(06):24-27. DOI：

ZHANG Lei, FU Zheng-cai, SUN Wei, et al. Analysis of Voltage Distribution Along Series Silicon Stacks and Voltage Sharing by Unequal Parameter Method[J]. High voltageapparatus, 2009, 45(6): 24-27. DOI：

摘要

内部均压是高压硅堆研制的关键技术

而硅堆电压分布不均的现象在端部最为突出。以硅堆分布参数等效电路为基础

先采用解析方法分析硅堆内部电压分布规律和影响因素

针对硅堆端部电压分布尤其不均匀的特点

建立EMTP仿真模型

分析端部强制均压元件参数对硅堆电压分布不均匀系数的影响。提出采用非等值均压参数配置方法改善端部电压分布

并通过实验验证了这种非等值均压参数配置方法对改善高压硅堆电压分布不均匀度的效果。研究表明

这种端部均压方法能有效降低硅堆端部的分压

从而提高硅堆整体的反向耐压。

Abstract

Voltage sharing is the key problem in development of high-voltage silicon stacks.The phenomenon of unequal voltage sharing is especially obvious at the ends of high-voltage silicon stacks.This paper analyzes the voltage sharing characteristics and the impact factors of high-voltage silicon stacks.A distributed parameter model of high-voltage silicon stack is set up

and the voltage sharing is investigated by EMTP simulation.The influences of voltage sharing component parameters on the end segments of the silicon stacks are analyzed.A method of unequal parameter voltage sharing is proposed.Numerical simulation and experiment are conducted to validate the effectiveness of the proposed method

and the results indicate that the proposed unequal parameter voltage sharing method can effectively reduce the voltage share at the end segments of a silicon stack

and therefore improve the reverse voltage-withstanding of whole silicon stack.

关键词

Keywords

references

Views

214

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

STUDY ON DIGITAL SIMULATION OF TRANSFERING DIRECT CURRENT USING DC BREAKERS

HVDC TEST FOR CONVERTER TRANSFORMER

A NEW SYNTHETIC TEST CIRCUIT FOR THE OPERATIONAL TEST OF HVDC THYRISTOR MODULES

MODERN HVDC THYRISTOR VALVES AND HVDC TRANSMISSION TECHNOLOGIES

Analysis of the Mismatch of HVDC Control and Protection System

Related Author

?SHANG Jin cheng

?ZHAO Bo nan

?GOU Rui feng

ZHANG Wan rong

ZHANG Chang shuan

A.Blomberg

E.Jansson

H-O Bjarme

Related Institution

西安高压电器研究所陕西西安710077

Xi’an High Voltage Apparatus Research Institute

Xi’an XD Transformer Co., Ltd.

Sweden

ABBPowerSystemsABABBSwitchgearAB SE-77180Ludvika

⁰