Analysis of Reason for a GIS Fault

GE Meng; TAO An-pei

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Analysis of Reason for a GIS Fault

更新时间：2025-04-26

- Analysis of Reason for a GIS Fault
- High VoltageApparatus Issue 1, Pages: 95-96(2008)
- 作者机构：
  
  1. 吉林供电公司试验所
  2. 吉林供电公司试验所吉林132001
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM59
- Published：2008
- 稿件说明：
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[1]葛猛,陶安培.一起SF_6封闭式组合电器故障的原因分析[J].高压电器,2008(01):95-96.

GE Meng, TAO An-pei. Analysis of Reason for a GIS Fault[J]. High voltageapparatus, 2008, (1): 95-96.
[1]葛猛,陶安培.一起SF_6封闭式组合电器故障的原因分析[J].高压电器,2008(01):95-96. DOI：

GE Meng, TAO An-pei. Analysis of Reason for a GIS Fault[J]. High voltageapparatus, 2008, (1): 95-96. DOI：

摘要

介绍了一起由于盘式绝缘子脏污引起的SF6封闭式组合电器（GIS）故障。通过详实的试验

对GIS脏污缺陷的早期发现与预防提出了建议。

Abstract

This article introduced a breakdown of SF6 GIS

which is due to dirty disc-insulator.Through the detailed experiment

the author analysised the origin of breakdown

and adviced about early discovery of dirty breakdown

followed by the scene experience and the equipment characteristic.

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