Mechanism of Secondary Electron Emission Avalanche Based on Electron-stimulated Desorption

GAO Wei1; SUN Guang-sheng1; YAN Ping1; SHAO Tao1

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Mechanism of Secondary Electron Emission Avalanche Based on Electron-stimulated Desorption

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- Mechanism of Secondary Electron Emission Avalanche Based on Electron-stimulated Desorption
- High VoltageApparatus Issue 5, Pages: 366-369(2004)
- 作者机构：
  
  1.   中国科学院电工研究所
  2.   中国科学院电工研究所北京100080中国科学院研究生院
  3.   北京100039
  4.   北京100080
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM85
- Published：2004
- 稿件说明：
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[1]高巍,孙广生,严萍,邵涛.基于电子激励解吸附原理的二次电子崩假说[J].高压电器,2004(05):366-369.

GAO Wei1, SUN Guang-sheng1, YAN Ping1, et al. Mechanism of Secondary Electron Emission Avalanche Based on Electron-stimulated Desorption[J]. High voltageapparatus, 2004, (5): 366-369.
[1]高巍,孙广生,严萍,邵涛.基于电子激励解吸附原理的二次电子崩假说[J].高压电器,2004(05):366-369. DOI：

GAO Wei1, SUN Guang-sheng1, YAN Ping1, et al. Mechanism of Secondary Electron Emission Avalanche Based on Electron-stimulated Desorption[J]. High voltageapparatus, 2004, (5): 366-369. DOI：

摘要

系统阐述了基于电子激励解吸附原理的二次电子崩假说的核心论点

即绝缘体表层气体解吸附是导致闪络发生的关键

分析了假说中的阴极三结合点场致电子发射、二次电子崩产生、二次电子发射系数δ、绝缘体表面电荷、绝缘体表面气体解吸附等因素在闪络过程中的作用。

Abstract

The core idea of mechanism of secondary electron emission avalanche that desorption of adsorbed surface gas is the key process leading to the surface flashover

is analyzed. The main factors

that is

emission of electrons from the cathode triple junction （the interface where the insulator

cathode and vacuum are combined）

secondary electron emission avalanche

secondary emission yield δ

insulator surface charge

electron-stimulated desorption efficiency

are expatiated.

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Related Author

GAO Wei1

SUN Guang-sheng1

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YAN Pin1

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Related Institution

Post-graduate School of Chinese Academy of Sciences

Graduate School,Chinese Academy of Sciences

中国科学院研究生院

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