DISCUSSION ON THE SHORT-TIME WITHSTAND CURRENT DENSITY

SHEN Yuxiu

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DISCUSSION ON THE SHORT-TIME WITHSTAND CURRENT DENSITY

更新时间：2025-04-26

- DISCUSSION ON THE SHORT-TIME WITHSTAND CURRENT DENSITY
- High VoltageApparatus Issue 1, Pages: 52-53(2001)
- 作者机构：
  
  沈阳高压开关有限责任公司,辽宁,沈阳,100025
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM835.2
- Published：2001
- 稿件说明：
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[1]沈聿修.关于短时耐受电流密度值[J].高压电器,2001(01):52-53.

SHEN Yuxiu. DISCUSSION ON THE SHORT-TIME WITHSTAND CURRENT DENSITY[J]. High voltageapparatus, 2001, (1): 52-53.
[1]沈聿修.关于短时耐受电流密度值[J].高压电器,2001(01):52-53. DOI：

SHEN Yuxiu. DISCUSSION ON THE SHORT-TIME WITHSTAND CURRENT DENSITY[J]. High voltageapparatus, 2001, (1): 52-53. DOI：

摘要

为方便导电回路设计取值

计算了常用导电材料的短时耐受电流密度值

并与通常估算的电流密度值作了比较。

Abstract

For the purpose of convenient choice of conductive circuit design

the short-time withstand current densities of conductive materials in common use are calculated

which are compared with the previous estimated values in this paper.

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