Simulation and Measurement of Very Fast Transient Overvoltage

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Simulation and Measurement of Very Fast Transient Overvoltage

更新时间：2025-04-26

- Simulation and Measurement of Very Fast Transient Overvoltage
- High VoltageApparatus Issue 1, Pages: 16-19(1999)
- 作者机构：
  
  1. 西安交通大学
  2. 西安交通大学 710049
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM86
- Published：1999
- 稿件说明：
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[1]王中方,张乔根,邱毓昌.快速暂态过电压的模拟及测量[J].高压电器,1999(01):16-19.

Simulation and Measurement of Very Fast Transient Overvoltage[J]. High voltageapparatus, 1999, (1): 16-19.
[1]王中方,张乔根,邱毓昌.快速暂态过电压的模拟及测量[J].高压电器,1999(01):16-19. DOI：

Simulation and Measurement of Very Fast Transient Overvoltage[J]. High voltageapparatus, 1999, (1): 16-19. DOI：

摘要

设计了一套模拟快速暂态过电压的实验装置

模拟的快速暂态过电压的振荡频率可达10MHz.设计制作的测量系统能满足测量需要.

Abstract

A test device for simulating very fast transient overvoltages （VFTO） is de-signed

with which monofrequent voltage oscillations up to 10MHz can be generated. The wave-form can be accurately recorded by the measuring system.

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