Simulation and Development of Nanosecond Pulsed Source

ZENG Li1; HU Jing-jing2; TANG Ju3

doi:10.13296/j.1001-1609.hva.2010.07.020

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Simulation and Development of Nanosecond Pulsed Source

更新时间：2025-04-26

- Simulation and Development of Nanosecond Pulsed Source
- High VoltageApparatus Vol. 46, Issue 7, Pages: 66-70(2010)
- 作者机构：
  
  1. 德阳电业局
  2. 四川省电力公司超高压公司
  3. 重庆大学输配电装备及系统安全与新技术国家重点实验室
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2010.07.020
  CLC： TN784
- Published：2010
- 稿件说明：
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[1]曾丽,胡晶晶,唐炬.一种纳秒级脉冲源的仿真及研制[J].高压电器,2010,46(07):66-70.

ZENG Li1, HU Jing-jing2, TANG Ju3. Simulation and Development of Nanosecond Pulsed Source[J]. High voltageapparatus, 2010, 46(7): 66-70.
[1]曾丽,胡晶晶,唐炬.一种纳秒级脉冲源的仿真及研制[J].高压电器,2010,46(07):66-70. DOI： 10.13296/j.1001-1609.hva.2010.07.020.

ZENG Li1, HU Jing-jing2, TANG Ju3. Simulation and Development of Nanosecond Pulsed Source[J]. High voltageapparatus, 2010, 46(7): 66-70. DOI： 10.13296/j.1001-1609.hva.2010.07.020.

摘要

对一种以射频三极管为主要元件的脉冲产生电路进行了计算和试验研究

研制了用于模拟PD信号试验的放电源

设计了储能电容为10pF和20pF的两种脉冲电路

讨论了放电源中主要器件雪崩三极管的雪崩效应理论

推导出三极管雪崩过程的简化模型

用电路仿真软件Pspice仿真分析该电路中储能电容和电源电压对脉冲波形的影响。详细讨论了实际制作过程中的注意事项和元器件的选择方法。实测储能电容为10pF和20pF的PD源脉宽分别为980ps和1180ps

幅值分别为8.9V和11.6V。结果表明

理论和仿真分析的结论一致。

Abstract

The avalanche effect theory of avalanche triode is discussed

and a simplified model of triode avalanche process is deduced. Through the circuit simulation software Pspice the influence of storage capacitor and power supply voltage on the pulse waveform is analyzed

and the rule of the influence is obtained. The matters that claim attention and the selection method of the primary device in manufacture process are explained. Accordingly

two pulse generating circuits with the storage capacitors of respective 10 pF and 20 pF are manufactured

and their output pulse waveforms are measured to be 980 ps and 1 180 ps in pulse width and 8.9 V and 11.6 V in amplitude

respectively.

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