Very Fast Transient Overvoltage Caused by Different Switching Modes of Disconnector

LIU Qing

doi:10.13296/j.1001-1609.hva.2011.04.008

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Very Fast Transient Overvoltage Caused by Different Switching Modes of Disconnector

更新时间：2025-04-26

- Very Fast Transient Overvoltage Caused by Different Switching Modes of Disconnector
- High VoltageApparatus Vol. 47, Issue 4, Pages: 17-22(2011)
- 作者机构：
  
  西安科技大学电气与控制工程学院
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2011.04.008
  CLC： TM864
- Published：2011
- 稿件说明：
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[1]刘青.隔离开关不同操作方式产生的快速暂态过电压[J].高压电器,2011,47(04):17-22.

LIU Qing. Very Fast Transient Overvoltage Caused by Different Switching Modes of Disconnector[J]. High voltageapparatus, 2011, 47(4): 17-22.
[1]刘青.隔离开关不同操作方式产生的快速暂态过电压[J].高压电器,2011,47(04):17-22. DOI： 10.13296/j.1001-1609.hva.2011.04.008.

LIU Qing. Very Fast Transient Overvoltage Caused by Different Switching Modes of Disconnector[J]. High voltageapparatus, 2011, 47(4): 17-22. DOI： 10.13296/j.1001-1609.hva.2011.04.008.

摘要

超高压GIS内开关操作引起的快速暂态过电压严重威胁了电力系统运行的安全性。笔者针对某550 kVGIS

建立了仿真模型并确定了相关参数

研究了多种运行方式、隔离开关不同操作条件下GIS内部各节点的快速暂态过电压

得到了操作顺序对过电压的影响规律

同时分析了隔离开关并联电阻对快速暂态过电压的抑制作用。结果表明

隔离开关分闸操作产生的过电压幅值远大于其合闸操作产生的过电压;切换母线操作产生的过电压较严重;被操作开关处的VFTO受操作方式影响最大;隔离开关并联电阻加速了过电压的衰减抑制效果明显

但GIS整体成本增加

电阻值大于200Ω时VFTO幅值小于1.6 p.u.。

Abstract

Operating experiences have shown that the very fast transient overvoltage（VFTO） caused by switching operations in extra high voltage gas insulated substation（GIS） threatens the security of power system.For a 550 kV GIS

the model has been built up and the parameters have been selected in this paper.Taking different operating modes into consideration

the magnitudes and frequency spectrum of VFTO along GIS nodes have been calculated by using EMTP.The relationships between switching modes and VFTO have been founded.The protective effect on VFTO of parallel resistor has also been studied.It is shown that the VFTO caused by opening operations are even higher than those caused by closing operations.Switching conditions and operating modes would exert an influence on VFTO

even for the node of the switches operated.The VFTO caused by switching one bus to the other is the most severe.Parallel resistors could accelerate the attenuation of overvoltages

the magnitudes of which will be less than 1.6p.u.

when the resistance is more than 200 Ω.

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