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Study on Risk of Failure of Defects in GIS Based on Partial Discharge
更新时间:2025-04-26
    • Study on Risk of Failure of Defects in GIS Based on Partial Discharge

    • High VoltageApparatus   Vol. 48, Issue 2, Pages: 19-22(2012)
    • DOI:10.13296/j.1001-1609.hva.2012.02.007    

      CLC: TM595
    • Published:2012

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  • HU Quan-wei1, WU Lei1, JI Sheng-qiang1, et al. Study on Risk of Failure of Defects in GIS Based on Partial Discharge[J]. High voltageapparatus, 2012, 48(2): 19-22. DOI: 10.13296/j.1001-1609.hva.2012.02.007.

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