DUAN Da-peng, ZHAO Cheng-nan, ZHAN Hua-mao, et al. Electric Field Simulation and Optimization Design of the Metal Flange Pouring Hole of Basin-type Insulator in 252 kV GIS[J]. High voltageapparatus, 2013, 49(9): 74-79.
DUAN Da-peng, ZHAO Cheng-nan, ZHAN Hua-mao, et al. Electric Field Simulation and Optimization Design of the Metal Flange Pouring Hole of Basin-type Insulator in 252 kV GIS[J]. High voltageapparatus, 2013, 49(9): 74-79. DOI: 10.13296/j.1001-1609.hva.2013.09.012.
Electric Field Simulation and Optimization Design of the Metal Flange Pouring Hole of Basin-type Insulator in 252 kV GIS
In order to detect the UHF signal of GIS inner partial discharge
it’s necessary to install partial discharge sensor on the metal flange pouring hole of basin-type insulator
which will produce influences on the electric field of basin-type insulator surface.To study the effect of the dimension and structure of pouring hole of metal flange to the electric field of basin-type insulator surface
ANSYS is adopted to calculate the electric field of basin-type insulator of 252 kV three phase in three tank type GIS.The simulation results show that the structure of pouring hole has a significant effect on the electric field of basin-type insulator surface.The dimension of pouing hole of metal flange has few influence on the electric field of basin-type insulator surface.Compared with no pouring hole
the maximum electric field of basin-type insulator surface increases by 3.21%