YAN Nianping, YU Qinxue, REN Wen’e, et al. Exploring Fault of HGIS with Physical-chemical Analysis and Mechanical Performance Analysis[J]. High voltageapparatus, 2014, 50(7): 111-116+122.
YAN Nianping, YU Qinxue, REN Wen’e, et al. Exploring Fault of HGIS with Physical-chemical Analysis and Mechanical Performance Analysis[J]. High voltageapparatus, 2014, 50(7): 111-116+122. DOI: 10.13296/j.1001-1609.hva.2014.07.020.
Exploring Fault of HGIS with Physical-chemical Analysis and Mechanical Performance Analysis
the energy dispersive X-ray detector(EDX) and TGA were used to analyze the physical and chemical properties of the basin-type insulator in faulty gas chamber
and a water pressure strength test was conducted to test the change of mechanical strength of the basin-type insulator.Thus the causes of the HGIS equipment fault are found to include two aspects:1)In the manufacturing process of the basin-type insulator
the theoretical formulation of the insulating materials(epoxy resin
curing agent
alumina)is not strictly followed
or tiny impurities exist in insulating materials
which affects the overall quality of the basin-type insulators; 2)the mechanical aging resistance of the basin-type insulator is insufficient
which leads to micro-cracks or other defects under continuous mechanical stress and finally causes the fault of the basintype insulator under further effect of high strength electric field. Moreover
some quality control measures are offered for newly made HGIS equipment
and some fault prevention approaches are proposed for the running HGIS equipment from same manufacturer and same batch.