NI Xuefeng, WANG Zijian, LIN Hao, et al. Temperature Field Simulation of Shunt Power Capacitor Used to UHV Engineering[J]. High voltageapparatus, 2016, 52(2): 107-114.
NI Xuefeng, WANG Zijian, LIN Hao, et al. Temperature Field Simulation of Shunt Power Capacitor Used to UHV Engineering[J]. High voltageapparatus, 2016, 52(2): 107-114. DOI: 10.13296/j.1001-1609.hva.2016.02.018.
Temperature Field Simulation of Shunt Power Capacitor Used to UHV Engineering
To obtain the temperature field distribution of shunt power capacitor used to ultra-high-voltage(UHV)engineering under working condition
based on fluid-solid-thermal coupled field
a 3-D temperature field simulation model for shunt power capacitor used to UHV engineering with a lateral orientation is formulated in ANSYS Workbench 15.0. The built model is solved in Fluent 15.0 using the finite volume method. The temperature in shell and core and its surfaces are obtained and systematically compared and investigated. The results reveal that the temperature of the top surface of the shell is higher than that of the bottom and side surfaces. The hottest spot of the capacitor shell locates top surface. The temperature of the side surface of the core is higher than that of the bottom and top surfaces. The temperature around arc part of the capacitor element is lower than other parts of the element. The hottest spot of the whole capacitor approximately locates on the central axis of the capacitor and is close to end part of the capacitor. The above results can be taken as a reference to capacitor operation and provide a potential method for the hottest temperature predication for the high-voltage shunt power capacitor.