Research on GIS Transient Enclosure Voltage Under Lightning Strike

WANG Haotian; ZAHNG Weidong; ZHANG Xiaoli; GUO Shaojie; LUO Guangxiao

doi:10.13296/j.1001-1609.hva.2016.09.011

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Research on GIS Transient Enclosure Voltage Under Lightning Strike

更新时间：2025-04-26

- Research on GIS Transient Enclosure Voltage Under Lightning Strike
- High VoltageApparatus Vol. 52, Issue 9, Pages: 61-64(2016)
- 作者机构：
  
  1. 华北电力大学新能源电力系统国家重点实验室
  2. 中国电力科学研究院
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2016.09.011
  CLC： TM595
- Published：2016
- 稿件说明：
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[1]王昊天,张卫东,张晓莉,郭韶杰,罗广孝.雷电冲击下GIS外壳暂态电位升的研究[J].高压电器,2016,52(09):61-64.

WANG Haotian, ZAHNG Weidong, ZHANG Xiaoli, et al. Research on GIS Transient Enclosure Voltage Under Lightning Strike[J]. High voltageapparatus, 2016, 52(9): 61-64.
[1]王昊天,张卫东,张晓莉,郭韶杰,罗广孝.雷电冲击下GIS外壳暂态电位升的研究[J].高压电器,2016,52(09):61-64. DOI： 10.13296/j.1001-1609.hva.2016.09.011.

WANG Haotian, ZAHNG Weidong, ZHANG Xiaoli, et al. Research on GIS Transient Enclosure Voltage Under Lightning Strike[J]. High voltageapparatus, 2016, 52(9): 61-64. DOI： 10.13296/j.1001-1609.hva.2016.09.011.

摘要

为了计算雷击GIS单相套管外引线时

GIS外壳暂态电位升高

建立了GIS电路模型。利用电磁场理论和多导体传输线理论提取了GIS主要元件参数

建立了GIS主要元件的电路模型。以某220 kV GIS智能开关设备为研究对象

计算了智能组件传感器安装处GIS外壳TEV

并进行了试验验证。所得的仿真结果为下一步智能组件端口骚扰电压的研究提供基础。

Abstract

In order to calculate the transient enclosure voltage（TEV） rise caused by lightning strike on single phase bushing of GIS

this paper establishes the circuit model of GIS. In this model

the electromagnetic field theory and the theory of multi-conductor transmission line is not only utilized to extract parameters of GIS main components

but also used to establish circuit model of main elements.Taking a 220 kV GIS intelligent switch equipment as research object

TEV of GIS is calculated where intelligence component’s sensor is installed. The result is verified by experiments. The simulation results provide a basis for research of intelligent component’s disturbance voltage.

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