In the efficient thermal design of insulated gate bipolar transistor（IGBT）module

long-term reliability assessment of converter system

and several other aspects

IGBT module temperature usually need to be got. However

the existing models and methods are time-consuming and difficult to solve the IGBT module temperature quickly. Based on the idea of direct method

this paper presents a new algorithm for solving the temperature of IGBT module. The power loss model of IGBT module is built with the fitting and interpolation algorithm; the equivalent lumped parameters Cauer thermal network of IGBT module is studied and established based on the electric heating analogy theory

and the thermal differential equation is differenced; Finally

a fast algorithm for solving the temperature of IGBT module is constructed in the same circuit simulator. In two-level three-phase inverter example

with comparing to the IPOSIM simulation results

the maximum error of the proposed algorithm is 3.01%

and the trend of temperature change is basically consistent with that of IPOSIM simulation; with comparing to the simulation time base on traditional physics-based IGBT device model

thermal network component model

the algorithm proposed improves the computation speed by nearly 1 255 times.