LI Jinbin, XIA Tian, CHEN Jun, et al. Analysis and Treatment of a HGIS Partial Discharge Family Defect[J]. High voltageapparatus, 2017, 53(5): 188-192.
LI Jinbin, XIA Tian, CHEN Jun, et al. Analysis and Treatment of a HGIS Partial Discharge Family Defect[J]. High voltageapparatus, 2017, 53(5): 188-192. DOI: 10.13296/j.1001-1609.hva.2017.05.030.
Analysis and Treatment of a HGIS Partial Discharge Family Defect
the abnormal sound and partial discharge signals occurred in repeatedly in a 110 kV HGIS equipment are analyzed based on ultrasonic detection of partial discharge
typical partial discharge map
SF6 gas composition analysis
powder composition analysis and disassembling inspection. The defect is found that the insulator baffle on the shaft side fails to mate with the insulator closely which causes floating partial discharge inside the HGIS. After analyzing the family defect characteristic of this kind of equipment
the authors propose several treatment and preventive measures
which can provide reference and experience for the gas insulated switchgear management and family defect diagnostic analysis and identification.
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