JIA Yongyong, YANG Jinggang, GAO Shan, et al. Simulation of Internal Electric Field of High-voltage Metal-enclosed Switchgear and Influencing Factors[J]. High voltageapparatus, 2017, 53(6): 154-160+166.
JIA Yongyong, YANG Jinggang, GAO Shan, et al. Simulation of Internal Electric Field of High-voltage Metal-enclosed Switchgear and Influencing Factors[J]. High voltageapparatus, 2017, 53(6): 154-160+166. DOI: 10.13296/j.1001-1609.hva.2017.06.026.
Simulation of Internal Electric Field of High-voltage Metal-enclosed Switchgear and Influencing Factors
Considering the complexity of actual switchgear structures
a 3D finite element model of the electric field in a high-voltage metal-enclosed switchgear is built by using the sub-area modeling and partial subdividing methods.Hence
the distribution and concentration areas of the electric field in the bus cabinet of the switchgear are obtained.The most concentrative areas of electric field
such as the areas of wall bushing and contact box
are simulated.The numerical analysis technique is adopted to analyze the effects of insulating spacer
grading ring and shield on the local electric field distribution
and corresponding optimization is performed.In addition
a 3D finite element model of busbar overlapping bolt to obtain the reference value of maximum number of exposed bolt threads for different interval.This research may provide a reference for improving electric field distribution in switchgear