Analysis of Artificial Line in High-voltage Breaker Short-line Fault Test

YAN Duifeng; WANG Peiren; WANG An; LIU Ping; LIU Pu; LI Gang; YAO Yuan; CHENG Yin

doi:10.13296/j.1001-1609.hva.2017.08.003

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Analysis of Artificial Line in High-voltage Breaker Short-line Fault Test

更新时间：2025-04-26

- Analysis of Artificial Line in High-voltage Breaker Short-line Fault Test
- High VoltageApparatus Vol. 53, Issue 8, Pages: 17-21(2017)
- 作者机构：
  
  西安高压电器研究院有限责任公司
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2017.08.003
  CLC： TM561
- Published：2017
- 稿件说明：
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[1]阎对丰,王培人,王安,刘平,刘朴,李刚,姚远,程茵.高压断路器近区故障试验人工链路分析研究[J].高压电器,2017,53(08):17-21.

YAN Duifeng, WANG Peiren, WANG An, et al. Analysis of Artificial Line in High-voltage Breaker Short-line Fault Test[J]. High voltageapparatus, 2017, 53(8): 17-21.
[1]阎对丰,王培人,王安,刘平,刘朴,李刚,姚远,程茵.高压断路器近区故障试验人工链路分析研究[J].高压电器,2017,53(08):17-21. DOI： 10.13296/j.1001-1609.hva.2017.08.003.

YAN Duifeng, WANG Peiren, WANG An, et al. Analysis of Artificial Line in High-voltage Breaker Short-line Fault Test[J]. High voltageapparatus, 2017, 53(8): 17-21. DOI： 10.13296/j.1001-1609.hva.2017.08.003.

摘要

在出现近区故障时

由于线路侧初始瞬态恢复电压上升率较高

对于SF6高压断路器而言

近区故障开断条件更为苛刻。文中从三角波产生的原理和试验方面

对其进行了全面的研究

并通过PSCAD仿真、低压模拟试验和高压试验对比

分析了人工链路杂散参数和低压模拟装置二极管结电容对高压试验结果的影响

最终得出结论:杂散电容导致人工链路实际投入数值比仿真时较小;低压模拟装置二极管结电容会导致人工链路在高压试验时参数偏高

尽量采用小电流和多个二极管串联模式

Abstract

For the SF6high-voltage breakers

when the short-line fault occurs

because of the higher rising rate of initial transient recovery voltage（TRV）

it’s harder to clear the fault current. This paper provides a comprehensive research about the triangle wave TRV

based on the process of traveling waves and short-line fault test in laboratory.Based on PSCAD simulation

comparing low-voltage simulation and high power test

the influences of the stray parameters of artificial line and the capacitance of the diode

on the actual results during high-power test are analyzed. Eventually come to the conclusion:first

the actual capacitance value is lower than PSCAD simulation

because of the stray capacitance;second

the actual parameters in high power test are higher than low-voltage simulation

because of the capacitance of the diode

try to adopt small current and multiple diode series modes.

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Related Author

LIU Ping

YAO Si-li

DU Wei

CHENG Yin

GAO Fei

LI Gang

LI Fang

Jin LIXiang

Related Institution

Xi’an High Voltage Apparatus Research Institute Co. Ltd.

西安高压电器研究所

电力部电力科学研究院北京100085

电力部电力科学研究院

中国电力科学研究院北京100085

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