Static Test Research on GIS Partial Overheating Fault by Infrared Imaging Technology

LI Shuang; BI Haitao; LU Xuchen; HONG He; LI Bin; LUO Bin; ZHAO Yisong

doi:10.13296/j.1001-1609.hva.2017.10.013

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Static Test Research on GIS Partial Overheating Fault by Infrared Imaging Technology

更新时间：2025-04-26

- Static Test Research on GIS Partial Overheating Fault by Infrared Imaging Technology
- High VoltageApparatus Vol. 53, Issue 10, Pages: 76-82(2017)
- 作者机构：
  
  1. 国网辽宁省电力有限公司电力科学研究院
  2. 国网辽宁省电力有限公司
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2017.10.013
  CLC： TM595
- Published：2017
- 稿件说明：
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[1]李爽,毕海涛,鲁旭臣,洪鹤,李斌,罗斌,赵义松.GIS局部过热故障红外成像技术诊断静态试验研究[J].高压电器,2017,53(10):76-82.

LI Shuang, BI Haitao, LU Xuchen, et al. Static Test Research on GIS Partial Overheating Fault by Infrared Imaging Technology[J]. High voltageapparatus, 2017, 53(10): 76-82.
[1]李爽,毕海涛,鲁旭臣,洪鹤,李斌,罗斌,赵义松.GIS局部过热故障红外成像技术诊断静态试验研究[J].高压电器,2017,53(10):76-82. DOI： 10.13296/j.1001-1609.hva.2017.10.013.

LI Shuang, BI Haitao, LU Xuchen, et al. Static Test Research on GIS Partial Overheating Fault by Infrared Imaging Technology[J]. High voltageapparatus, 2017, 53(10): 76-82. DOI： 10.13296/j.1001-1609.hva.2017.10.013.

摘要

为了研究红外成像技术在GIS内局部过热故障诊断的有效性和可行性

文中通过静态试验方法

搭建了GIS内局部过热故障仿真平台

研究了故障点不同温度下外壳不同位置的稳定温升

并得到了GIS内部过热点温度及与其对应外壳温升间的函数关系。利用红外成像仪可清晰观察到外壳的局部高温

验证了试验的有效性和可行性。研究表明:当GIS内部发生过热故障时

在与其对应的外壳顶部将产生局部高温。以此高温点为中心

沿GIS轴线方向温度向两侧递减

呈开口向下的抛物线形。距最高温度点0.6 m处

温度变化大约为11

5℃。超过0.6 m

温度下降趋势减缓

超过3 m后

基本为环境温度。如果外壳局部温升超过18.08℃

与其对应的内部过热点温度可能在105℃左右。

Abstract

To research the diagnosis effectiveness and feasibility of infrared imaging technology on overheating fault inside GIS

a test device to simulate the overheating fault inside GIS is developed by static state test method.The stable temperature rise at different point of GIS enclosure under different fault point temperature is investigated and the function relationship between the temperature rise at GIS enclosure point corresponding to the overheating fault inside GIS and the overheating fault temperature is obtained.The local high temperature on GIS enclosure can be observed by infrared imaging clearly

therefore

the effectiveness and feasibility of this test is verified.The results indicated that when there is an overheating fault inside GIS

the local high temperature on GIS enclosure corresponding to the overheating fault will produce.Take the highest temperature point as origin

the temperature decreases along the axis of GIS

which presents an opening down parabola.From the highest temperature point 0.6 m away

the temperature decreases 11 ℃-15 ℃.The tendency of temperature declines will be slow when excess 0.6 m.The temperature will be ambient temperature when distance excess 3 m.If the highest temperature rise on GIS enclosure is greater than 18.08℃

the overheating fault point inside the GIS corresponding to which may be about 105 ℃.

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