Electric Field Simulation of GIS Insulators Typical Defects

CHANG Wenzhi; BI Jiangang; LIU Shupin; YUAN Shuai; ZHOU Hongyang; DU Fei; MA Guoming

doi:10.13296/j.1001-1609.hva.2018.05.022

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Electric Field Simulation of GIS Insulators Typical Defects

更新时间：2025-04-26

- Electric Field Simulation of GIS Insulators Typical Defects
- High VoltageApparatus Vol. 54, Issue 5, Pages: 138-143(2018)
- 作者机构：
  
  1. 中国电力科学研究院有限公司
  2. 华北电力大学
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2018.05.022
  CLC： TM216
- Published：2018
- 稿件说明：
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[1]常文治,毕建刚,刘姝嫔,袁帅,周宏扬,杜非,马国明.GIS盆式绝缘子典型缺陷的电场仿真[J].高压电器,2018,54(05):138-143.

CHANG Wenzhi, BI Jiangang, LIU Shupin, et al. Electric Field Simulation of GIS Insulators Typical Defects[J]. High voltageapparatus, 2018, 54(5): 138-143.
[1]常文治,毕建刚,刘姝嫔,袁帅,周宏扬,杜非,马国明.GIS盆式绝缘子典型缺陷的电场仿真[J].高压电器,2018,54(05):138-143. DOI： 10.13296/j.1001-1609.hva.2018.05.022.

CHANG Wenzhi, BI Jiangang, LIU Shupin, et al. Electric Field Simulation of GIS Insulators Typical Defects[J]. High voltageapparatus, 2018, 54(5): 138-143. DOI： 10.13296/j.1001-1609.hva.2018.05.022.

摘要

气体绝缘金属封闭开关设备（gas insulated switchgear

GIS）是电力系统中的重要设备

盆式绝缘子作为GIS设备核心绝缘组件

对于GIS设备的安全稳定运行至关重要。盆式绝缘子故障是导致GIS无法正常运行的主要原因

文中设计了气隙缺陷、嵌件毛刺缺陷、单金属颗粒缺陷以及金属颗粒群缺陷四种典型放电缺陷类型

利用有限元静电场数值计算方法建立了252 kV盆式绝缘子的仿真模型。研究了不同典型缺陷模型的电场分布情况

分析了不同缺陷对电场的畸变情况。根据仿真结果设计了四种典型模型的缺陷尺寸参数

为GIS内部缺陷的模拟和试验提供了参考。

Abstract

Gas insulated switchgear（GIS）is an important equipment in the electrical power system.As the coreinsulation components of GIS equipment

insulators are crucial for the safe and stable operation of GIS equipment.The failure of insulators is the main reason that the GIS cannot work normally. In this paper

four typical types ofdischarge defects were designed:air gap defect

insert glitch defect

single metal particle defect and metal particlesdefect. Based on the finite element method of electrostatic field

the simulation model of 252 kV insulator wasestablished.The electric field distribution of different typical defect models was studied

and the distortion of electricfields by different defects was analyzed. According to the simulation results

the defect size parameters of four typicalmodels were designed to provide reference for the simulation and testing of internal defects in GIS.

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