LIU Zhenxiang, XU Jianyuan, TAN Shengwu, et al. Calculations and Analysis on Cold State Dielectric Recovery Characteristic in Super Class B Induced Current High Speed Release Device[J]. High voltageapparatus, 2018, 54(7): 242-247.
LIU Zhenxiang, XU Jianyuan, TAN Shengwu, et al. Calculations and Analysis on Cold State Dielectric Recovery Characteristic in Super Class B Induced Current High Speed Release Device[J]. High voltageapparatus, 2018, 54(7): 242-247. DOI: 10.13296/j.1001-1609.hva.2018.07.034.
Calculations and Analysis on Cold State Dielectric Recovery Characteristic in Super Class B Induced Current High Speed Release Device
The dielectric recovery characteristics on cold state during interrupting course of super class B inducedcurrent high speed release device are studied by numerical calculations and analyses. The dynamic changes of elec-tric field intensity and the density of SF6 in gas chamber during interrupting course are calculated. Critical break-down voltage curve could be obtained based on the stream theory. By comparing the critical breakdown voltage andthe transient recovery voltage(TRV)
to verify whether it meets the requirements of the cold state breaking ability ofthe high speed release device. The results show that:the density of SF6 in gas chamber is basically unchanged
whichremains at about 27 kg/m3
while the electric field intensity is obviously changed with opening range. Therefore
thedielectric strength recovery process is the main factor affecting the dielectric recovery characteristics. When superclass B induced current high speed release device in the cold state breaking process
the critical breakdown voltageis less than the TRV value with the opening range less than 25 mm
indicating that when the opening distance is inthis range
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WANG Weifang
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Related Institution
Key Laboratory of Control of Power Transmission and Conversion, Shanghai Jiao Tong University
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School of Electrical Engineering, Xi'an Jiaotong University