Optimal Design of Shielding Structure of Electronic Voltage Transformer in Switchgear

XU Zili; ZHOU Feng; CHEN Gang; LIU Weixin

doi:10.13296/j.1001-1609.hva.2019.08.011

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Optimal Design of Shielding Structure of Electronic Voltage Transformer in Switchgear

更新时间：2025-04-26

- Optimal Design of Shielding Structure of Electronic Voltage Transformer in Switchgear
- High VoltageApparatus Vol. 55, Issue 8, Pages: 81-85+95(2019)
- 作者机构：
  
  1. 中国电力科学研究院有限公司
  2. 国网江苏省电力有限公司电力科学研究院
  3. 国网新疆电力有限公司电力科学研究院
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2019.08.011
  CLC： TM451
- Published：2019
- 稿件说明：
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[1]徐子立,周峰,陈刚,刘卫新.开关柜内电子式电压互感器屏蔽结构的优化设计[J].高压电器,2019,55(08):81-85+95.

XU Zili, ZHOU Feng, CHEN Gang, et al. Optimal Design of Shielding Structure of Electronic Voltage Transformer in Switchgear[J]. High voltageapparatus, 2019, 55(8): 81-85+95.
[1]徐子立,周峰,陈刚,刘卫新.开关柜内电子式电压互感器屏蔽结构的优化设计[J].高压电器,2019,55(08):81-85+95. DOI： 10.13296/j.1001-1609.hva.2019.08.011.

XU Zili, ZHOU Feng, CHEN Gang, et al. Optimal Design of Shielding Structure of Electronic Voltage Transformer in Switchgear[J]. High voltageapparatus, 2019, 55(8): 81-85+95. DOI： 10.13296/j.1001-1609.hva.2019.08.011.

摘要

中压开关柜的空间狭小使基于电阻分压的EVT（electronic voltage transformer

EVT）存在较大的分布电容而影响其准确度。通过EVT与开关柜之间的分布电容等效电路模型

分析了分布电容对EVT准确度的影响。仿真对比了不同屏蔽结构的单相EVT及三相EVT开关柜环境下的输出电压变化及最大场强

结果表明

对于整体高度相等的屏蔽罩

高低压屏蔽结构和高压屏蔽结构的屏蔽效果较优

在屏蔽整体高度达到60 mm时

开关柜分布电容对EVT比差的影响可降低到0.1%左右

当整体屏蔽高度达到90 mm时

其影响可降低到0.02%以内。采用高压屏蔽结构的样机测试结果验证了屏蔽结构对于开关柜分布电容屏蔽的有效性。

Abstract

The electronic voltage transformer（EVT）based on resistor divider has large distributed capacitance due to the narrow working space in medium voltage switchgear

which affects its accuracy.The equivalent circuit model of distributed capacitor between the EVT and the switchgear is analyzed in this paper.Simulation is conducted to obtain and compare the output voltages and the maximum electric field strengths of the single-phase and three-phase EVTs with different shielding structures.The results show that the shielding effects of high-and-low-voltage shielding structure and high-voltage shielding structure are better for the same shield height.When the height of the shield reaches 60 mm

the influence of the distributed capacitance on the EVT ratio error is reduced to about 0.1%.When the shield height reaches 90 mm

this influence is reduced to less than 0.02%.The testing results of the prototype with high-voltage shielding structure verify the effectiveness of shielding the distributed capacitance.

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