Insulation Breakdown Fault Caused by Stress Crack of GIS Basin-type Insulator

LIU Tong; LI Hongtao; LIU Jianjun; SONG Siqi; LIN YuANDi

doi:10.13296/j.1001-1609.hva.2020.02.036

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Insulation Breakdown Fault Caused by Stress Crack of GIS Basin-type Insulator

更新时间：2025-04-26

- Insulation Breakdown Fault Caused by Stress Crack of GIS Basin-type Insulator
- High VoltageApparatus Vol. 56, Issue 2, Pages: 240-245(2020)
- 作者机构：
  
  国网江苏省电力有限公司电力科学研究院
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2020.02.036
  CLC： TM216
- Published：2020
- 稿件说明：
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[1]刘通,李洪涛,刘建军,宋思齐,林元棣.一起GIS盆式绝缘子应力开裂导致绝缘击穿故障[J].高压电器,2020,56(02):240-245.

LIU Tong, LI Hongtao, LIU Jianjun, et al. Insulation Breakdown Fault Caused by Stress Crack of GIS Basin-type Insulator[J]. High voltageapparatus, 2020, 56(2): 240-245.
[1]刘通,李洪涛,刘建军,宋思齐,林元棣.一起GIS盆式绝缘子应力开裂导致绝缘击穿故障[J].高压电器,2020,56(02):240-245. DOI： 10.13296/j.1001-1609.hva.2020.02.036.

LIU Tong, LI Hongtao, LIU Jianjun, et al. Insulation Breakdown Fault Caused by Stress Crack of GIS Basin-type Insulator[J]. High voltageapparatus, 2020, 56(2): 240-245. DOI： 10.13296/j.1001-1609.hva.2020.02.036.

摘要

GIS设备在电力系统中应用广泛

其安全运行具有十分重要的工程意义。文中针对某变电站一起间隔母线气室（220 kV GIS）盆式绝缘子击穿故障

采用扫描电子显微镜、能谱仪等检验手段全方位对气室绝缘击穿原因进行深入分析

并结合返厂解体和设备装配工序检查

明确了该次故障是由于设备装配过程中三相导体不对中产生的额外应力引起盆式绝缘子裂纹导致的

并根据此次故障分析结论

提出了此类故障的防治建议。

Abstract

Gas Insulated Switchgear（GIS）equipment has been applied in the power system widely

and its safe and reliable operation is very important.In this paper

a case of insulation breakdown fault in spacing bus chamber（220 kV GIS）was introduced

using detection methods such as scanning electron microscope and energy spectrometer to analyze the fault causes.Combining the disassembly test and the assembly process check

the fault cause was affirmed.Extra stress was produced because of the misalignment of three phase conductor during assembly process

which caused cracks on basin-type insulator and finally led to breakdown fault.The prevention and control proposal was proposed according to the fault analysis conclusion.

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Related Institution

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