LYU Bin, ZHAO Junping, ZHANG Qiaogen, et al. Research on Stress Distribution Characteristics of GIS Basin Insulator Under Structural Defects[J]. High voltageapparatus, 2020, 56(7): 109-115.
LYU Bin, ZHAO Junping, ZHANG Qiaogen, et al. Research on Stress Distribution Characteristics of GIS Basin Insulator Under Structural Defects[J]. High voltageapparatus, 2020, 56(7): 109-115. DOI: 10.13296/j.1001-1609.hva.2020.07.016.
Research on Stress Distribution Characteristics of GIS Basin Insulator Under Structural Defects
采用有限元软件Ansys对252 k V盆式绝缘子正常及带有典型缺陷情况下的应力应变分布情况进行仿真计算
并对正常盆式绝缘子水压试验的应变分布进行测试
与仿真结果进行了对照。结果表明
盆式绝缘子仿真得到的应力分布与水压试验结果相吻合
验证了仿真结果的准确性。此外
存在结构缺陷时
绝缘子最大应力超过正常状态的2倍
且表面缺陷的危害程度大于内部缺陷。
Abstract
Basin insulator is an important component of GIS
which may lead to the emergence and development of structural defects and even serious accidents under abnormal loads. In order to study the mechanical properties of basin insulators under different working conditions
the stress-strain distribution of 252 k V basin insulators under normal and typical defects was simulated by using finite element software Ansys. The strain distribution of normal basin insulators under hydraulic test was tested and compared with the simulation results. The results show that the stress distribution obtained by the simulation of the basin insulator coincides with the hydraulic test results
which verifies the accuracy of the simulation results. In addition
when there are typical defects
the maximum stress of insulators is morethantwicethenon-defectstate
and the damage caused by surface defects is greater than that of internal defects.