Study on Diagnosis Method and Influence Factor of Overheating of Contacts in 550 kV GIS

LU Xuchen; LI Shuang; TANG Jianeng; BI Haitao; WANG Liang; ZHONG Xue

doi:10.13296/j.1001-1609.hva.2021.11.029

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Study on Diagnosis Method and Influence Factor of Overheating of Contacts in 550 kV GIS

更新时间：2025-04-26

- Study on Diagnosis Method and Influence Factor of Overheating of Contacts in 550 kV GIS
- High VoltageApparatus Vol. 57, Issue 11, Pages: 220-226(2021)
- 作者机构：
  
  1. 国网辽宁省电力有限公司电力科学研究院
  2. 沈阳工程学院
  3. 国网辽宁省电力有限公司物资分公司
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2021.11.029
  CLC： TM595
- Published：2021
- 稿件说明：
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LU Xuchen, LI Shuang, TANG Jianeng, et al. Study on Diagnosis Method and Influence Factor of Overheating of Contacts in 550 kV GIS[J]. High voltageapparatus, 2021, 57(11): 220-226.
DOI：

LU Xuchen, LI Shuang, TANG Jianeng, et al. Study on Diagnosis Method and Influence Factor of Overheating of Contacts in 550 kV GIS[J]. High voltageapparatus, 2021, 57(11): 220-226. DOI： 10.13296/j.1001-1609.hva.2021.11.029.

摘要

为了明确GIS内部过热缺陷的暂态过程及红外成像诊断方法

文中在试验室搭建了550 k V GIS母线触头过热缺陷模型

分别设置了不同的接触不良情况

在不同的电流下

得到了故障点温度及外壳的温度分布情况

并与接触良好情况的隔离开关及其分支母线气室进行了对比。同时

采用有限元方法

计算了试验室无法开展的其他试验工况。研究结果表明:只要外壳局部温度高于环境温度

通过红外成像仪就可以清晰地观测到;接触电阻、负荷电流和环境温度对故障点外壳的温升影响较大

盆式绝缘子类型对故障点外壳温升无影响;起初

接触电阻与其产生的局部高温是一个线性的交互过程

当温度接近导体熔点时

从导通到最终熔化经历的时间很短

这一瞬态过程不能通过带电检测发现。

Abstract

For identifying the transient process of internal overheating defect in GIS and infrared imaging diagnosis method

the overheating defect model of contact of 550 kV GIS bus is set up in the laboratory in this paper

the different bad contact conditions are set respectively. The temperature distribution of the fault point and of enclosure under different current is obtained and compared with disconnector and its branch busbar gas compartments in good contact condition. At the same time

the finite element method is adopted to calculate other test conditions which can not be performed in the laboratory. The study result shows that as long as the local temperature of the enclosure is higher than the ambient temperature

it can be clearly observed by infrared image that the influence of the contact resistance

load current and ambient temperature on the temperature rise of the enclosure of the fault point is bigger

while

the type of insulating spacer has no influence on the temperature rise of enclosure of the fault point;Initially

the contact resistance and its generated local high temperature are a linear interaction process.When the temperature is close to the melting point of the conductor

the time from conduction to final melting is very short and this transient process can not be detected by live detection.

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