Metallized film capacitors can work under high electric field strength due to their self-healing characteristics

but the electrode degradation due to electric field distortion at the edge of the electrode will reduce the capacitance

so the evaluation of the degree of electric field distortion at the edge of the electrode can provide support for the structural design of the capacitor.Based on the characteristics of the electric field distribution near the three-combination point

a kind of new method to evaluate the degree of electric field distortion at the edge of the electrode is proposed. The T-type metallized film capacitor is used as the calculation model

the numerical solution of the electric field near the electrode

which is obtained by the finite element method

is fitted by the theoretical analytical formula adopting electrical field distribution and the goodness of fit is above 99%. The fitting coefficient is defined as the electric field distortion coefficient to evaluate the degree of electric field distortion

and the law of the influence of electrode thickness

film thickness and segmentation-gap width on the degree of electric field distortion is obtained:the electric field distortion coefficient increases in the form of a power function with the decrease of electrode thickness

and decreases in the form of a power function with the decrease of the film thickness or segmentation-gap width and

at the same time

the electric field distortion coefficient can be accurately estimated in accordance with the multi-parameter relationship.