Simulation Analysis of Overvoltage and Physical Field for Breakdown of 750 kV Circuit Breaker

MA Feiyue; XIANG Zhonghua; YANG Weidong; LU Cong; NIU Bo; NI Hui

doi:10.13296/j.1001-1609.hva.2022.06.026

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Simulation Analysis of Overvoltage and Physical Field for Breakdown of 750 kV Circuit Breaker

更新时间：2025-04-26

- Simulation Analysis of Overvoltage and Physical Field for Breakdown of 750 kV Circuit Breaker
- High VoltageApparatus Vol. 58, Issue 6, Pages: 186-192(2022)
- 作者机构：
  
  1. 国网宁夏电力有限公司电力科学研究院
  2. 国网宁夏电力有限公司
  3. 国网宁夏电力有限公司检修公司
- 作者简介：
- 基金信息：
- DOI：10.13296/j.1001-1609.hva.2022.06.026
  CLC： TM561
- Published：2022
- 稿件说明：
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MA Feiyue, XIANG Zhonghua, YANG Weidong, et al. Simulation Analysis of Overvoltage and Physical Field for Breakdown of 750 kV Circuit Breaker[J]. High voltageapparatus, 2022, 58(6): 186-192.
DOI：

MA Feiyue, XIANG Zhonghua, YANG Weidong, et al. Simulation Analysis of Overvoltage and Physical Field for Breakdown of 750 kV Circuit Breaker[J]. High voltageapparatus, 2022, 58(6): 186-192. DOI： 10.13296/j.1001-1609.hva.2022.06.026.

摘要

滤波器场SF6断路器需要根据系统运行工况的变化和对无功及滤波的需求随时开断和关合，750 kV滤波器场断路器相对其他电压等级运行工况更加苛刻，故障率高于常规罐式断路器。文中从投切过程波形分析、现场检查、暂态过程仿真对一起750 kV滤波器场断路器内部间隙击穿故障进行分析，给出了故障路径及原因。解体验证了间隙击穿分析正确性，并进一步开展电镜检测分析、异物动态运动轨迹仿真分析、异物附着屏蔽罩表面时电场强度仿真，确定了异物引发间隙击穿的根源，为加强滤波器场断路器异物管控及分析投切过程中异物引发内部击穿提供帮助。

Abstract

SF6circuit breaker of filter field needs to interrupt and make at any time in accordance with the change of system operation condition and the demand for reactive power and filtering. The operation condition of 750 kV filter field circuit breaker is more severe than other voltage levels and the failure rate is higher than that of conventional dead tank circuit breaker. In this paper

the internal gap breakdown of 750 kV filed circuit breaker is analyzed from such aspects as waveform analysis of switching process

on-site inspection and transient process simulation

the fault path and cause of the fault are given. The correctness of the gap breakdown analysis is analyzed by the disassembly.Furthermore

through the analysis of electron microscope

the simulation analysis of the dynamic motion trajectory and the simulation of the electric field strength when the foreign matter adheres to the surface of the shielding cover

the source of gap breakdown caused by the foreign object is determined

which provides the help for strengthening the control of the foreign matter in the filter field circuit breaker and analyzing the internal breakdown caused by the foreign matter in the switching process.

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Related Institution

North China Branch of State Grid Corporation of China

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Xi’an Jiaotong University

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