For improving the accuracy and efficiency of hydrogen concentration in early fault of power storage system and assuring safe operation and high stability of the storage equipment

a series of SnO

2

/Pd thin film hydrogen sensors are prepared by magnetron sputtering cosputtering technology. The metal-oxide-semiconductor films doped with SnO

2

/Pd are prepared on ceramic plates with different RF sputtering powers (130 W and 150 W)

and the comprehensive gas-sensitive properties are tested. The result shows that the 150 W-power sample (sample B) shows better responsiveness and higher operating temperature at the same hydrogen concentration

while the 130 W-power sample (sample A) shows better long-term stability. Both sensors have good selectivity

can effectively distinguish other interfering gases in the oil

and accurately detect the variation of hydrogen concentration. The new thin-film gas sensor has superior performance characteristics and provides a reliable technical means for real-time hydrogen monitoring in the field of electric power energy storage

substation

hydrogen industry and environmental protection.