LOU Yantao, LIU Qi. Influence of Stray Inductance on Turn-off Characteristics of IGCT-MMC’s Device[J]. High voltage apparatus, 2025, 61(8): 170-175.
DOI:
LOU Yantao, LIU Qi. Influence of Stray Inductance on Turn-off Characteristics of IGCT-MMC’s Device[J]. High voltage apparatus, 2025, 61(8): 170-175. DOI: 10.13296/j.1001-1609.hva.2025.08.022.
Influence of Stray Inductance on Turn-off Characteristics of IGCT-MMC’s Device
The stray inductance of busbars of MMC submodel affects the turn-off characteristics of the IGCTs and diodes. Based on the analysis of the switching behavior of the power devices in the MMC submodule
the influence of the stray inductance of each busbar of IGCT-MMC submodel on the turn-off characteristics of IGCT and diode device is analyzed based on the simualtino calcualtion. The double pulse test results and simulation results are compared and the effectiveness of the simulation model and analysis cnclusion is verified. The result shows that in case of large stray inductances of the busbars and the stray inductances of the main converter circuit in particular
the turn-off overshoot voltage
turn-off peak power and losses of the IGCTs and diodes are improved significantly. The research result in this paper can provide reference for the optimal design of MMC converter based on IGCT.