Atmospheric neutron radiation poses a threat to semiconductor devices in electronic information systems and power electronics systems

especially in high-altitude areas. In the context of ‘power transmission from Xizang to outside'

with the continuous construction of ultra-high voltage direct current transmission projects

the study of atmospheric neutron irradiation effects on thyristors used in converter valves has received increasing attention. This article refers to the international non-destructive experimental method for semiconductor irradiation effects. Based on the study of the variation law of irradiation failure rate of thyristors used in DC transmission with voltage

temperature variables are introduced to quantitatively analyze the change of failure rate of thyristors at different temperatures

and the temperature correction function in their failure rate model is fitted. The experiment found that within the normal operating temperature range of thyristors

the failure rate of single particle burnout caused by neutron irradiation decreases with increasing temperature. The variation of fault current caused by particle incident on the device was obtained through semiconductor software simulation using technology computer aided design (TCAD) technology. The simulation results were consistent with experimental laws. The experimental results of this article can provide support and guidance for the design of direct current transmission projects and the assessment of radiation failure rates.